Name: IRF640NPBF
Brand: Infineon Technologies
SKU: IRF640NPBF-ND
Price: 1.7545 EUR
Availability: InStock

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IRF640NPBF
DigiKey Part Number	IRF640NPBF-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRF640NPBF
Description	MOSFET N-CH 200V 18A TO220AB
Customer Reference
Detailed Description	N-Channel 200 V 18A (Tc) 150W (Tc) Through Hole TO-220AB
Datasheet	Datasheet
EDA/CAD Models	IRF640NPBF Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1160 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	IRF640

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Tube