EPC Design Tips+ Webinar
Easy Design Tips to Maximize Performance and Reliability in Your GaN Designs.
EPC Motor Drive Webinar
Learn how to harness the power of eGaN® FETS and ICs for Motor Drives.
Design Tips+ Webinar
Harness the Power of eGaN® FETs and ICs for Motor Drives
New Product Discoveries Ep 308: OSEPP Electronics and EPC |Digi-Key Electronics
How to GaN - 01: Material Capability Comparisons
eGaN® FET Reliability
Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.
eGaN-based Eighth Brick Converter
Review of the design specifications of a 500 W 1/8th brick converter
eGaN Integrated GaN Power
eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.
Driving eGaN FETs with the LM5113
The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Paralleling eGaN® FETs
Detailing the work done to make it as easy as possible to use eGaN FETs in power conversion applications.
Second Gen Lead Free eGaN® FETs Overview
The new-generation is lead free and halogen free and has improved electrical performance.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.