EPC Efficient Power Conversion

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

GaN for LiDAR

Image of EPC's GaN for LiDAR

EPC’s Alex Lidow explains why eGaN FETs and ICs excel at powering LiDAR lasers and why both solid-state and rotating LiDAR units will have roles in autonomous vehicles, robotics, and drones. Learn More


Image of EPC's eGaN Integrated Circuits Gate Driver plus FET

Power transistors made with eGaN technology can switch in a nanosecond or less. As explained by EPC's Alex Lidow, combining the eGaN gate driver on the same chip as the power transistor simplifies the design and lowers the cost of power electronics. Learn More

eGaN® FETs for Best-in-Class 48 V DC/DC

Image of EPC's DC/DC Conversion

In all topologies with 48 VIN, the highest efficiency comes with using GaN devices. 100 V GaN devices increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion. Applications include servers, multi-user gaming systems, autonomous cars, artificial intelligence, and automotive power systems. Learn More

Featured Products

Image of EPC's EPC2051 100 V eGaN Power Transistor

EPC2051 100 V eGaN® Power Transistor

EPC’s EPC2051 100 V eGaN® power transistor is 30 times smaller than comparable silicon and is capable of 97% efficiency at 500 kHz. Learn More

Image of EPC's EPC2106 Half Bridge

EPC2106 Half Bridge

EPC's EPC2106 half bridge has high efficiency power conversion in a small footprint. Learn More

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Newest Products View All (39)

EPC2216 Enhancement Mode Power Transistor

EPC's gallium nitride (GaN) transistors have exceptionally high electron mobility and low-temperature coefficient, allowing very low RDS(on). Learn More

EPC2111 30 V eGaN® Transistor Half-Bridge

EPC's EPC2111 eGaN® half-bridge enables 12 V to 1.8 V system efficiency over 85% at 5 MHz at 14 A output reducing costs to end user’s power conversion systems. Learn More

EPC2214 Automotive Qualified 80 V eGaN® FET

EPC's EPC2214 is an 80 V, 20 mΩ eGaN FET with a pulsed current rating of 47 A in a tiny 1.8 mm x 1.8 mm footprint. Learn More

GaN Automotive Applications

EPC's GaN automotive enhancement mode power transistors take full advantage of the improved efficiency, speed, smaller size, and lower cost of eGaN® devices. Learn More

EPC9126/EPC9126HC LiDAR Demo Boards

EPC's EPC9126/EPC9126HC dev boards are primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak). Learn More

100V Gen 5 Family

The latest generation of 100 V GaN devices increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion. Learn More

Recent PTMs View All (10)

eGaN® FET Reliability Updated: 2016-03-30

Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.

Duration: 5 minutes
eGaN-based Eighth Brick Converter Publish Date: 2015-08-24

Review of the design specifications of a 500 W 1/8th brick converter

Duration: 5 minutes
eGaN Integrated GaN Power Publish Date: 2015-06-19

eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.

Duration: 5 minutes
Driving eGaN FETs with the LM5113 Publish Date: 2012-10-16

The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.

Duration: 15 minutes

Featured Videos View All (54)

Texas Instruments/Wurth/EPC GaN Solutions First Look Video

The combination of TI’s LMG1210 drivers, EPC’s EPC8009 GaN FETs, and Würth Elektronik WE-MAPI and WE-MAIA inductors enable designers to meet the demand for increased efficiency in a smaller form factor.

EPC's Alex Lidow shows off their latest wide-bandgap solutions at APEC

In this video, EPC CEO Alex Lidow talks to Embedded Computing Design’s Alix Paultre at the APEC exhibition in Anaheim, California. The various design-ins shown underscore the advantages GaN-based devices can provide a power system.

PSDtv - EPC on Why Silicon is Dead at APEC 2019

In this episode of PSDtv Alex Lidow, Chief Executive Officer and Co-Founder of Efficient Power Conversion (EPC) is at APEC 2019 in Anaheim an Discusses why their GaN on Silicon devices make Silicon now dead.

APEC 2017 Applications for GaN

In this video, Alex Lidow, CEO, takes a “walk through our booth,” showing eGaN FETs and ICs in a wide range of applications including EPC’s latest generation FETs for DC-DC conversion.

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