Name: SISS30DN-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SISS30DN-T1-GE3TR-ND
Price: 1.8271 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISS30DN-T1-GE3
DigiKey Part Number	742-SISS30DN-T1-GE3TR-ND - Tape & Reel (TR) 742-SISS30DN-T1-GE3CT-ND - Cut Tape (CT) 742-SISS30DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS30DN-T1-GE3
Description	MOSFET N-CH 80V 15.9A/54.7A PPAK
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 15.9A (Ta), 54.7A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	15.9A (Ta), 54.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	8.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1666 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S
Base Product Number	SISS30