Name: SIS488DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS488DN-T1-GE3TR-ND
Price: 1.6456 EUR
Availability: InStock

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SIS488DN-T1-GE3
cms-digikey-product-number	SIS488DN-T1-GE3TR-ND - Tape & Reel (TR) SIS488DN-T1-GE3CT-ND - Cut Tape (CT) SIS488DN-T1-GE3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SIS488DN-T1-GE3
cms-description	MOSFET N-CH 40V 40A PPAK1212-8
cms-standard-lead-time	55 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 40 V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
cms-datasheet	cms-datasheet
cms-eda-cad-models	SIS488DN-T1-GE3 Models

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cms-category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.2V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 20 V
Part Status Active	Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 40 V	Supplier Device Package PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C 40A (Tc)	Package / Case PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SIS488
Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V