Name: TPN4R712MD,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN4R712MDL1QTR-ND
Price: 1.3552 EUR
Availability: InStock

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TPN4R712MD,L1Q
DigiKey Part Number	TPN4R712MDL1QTR-ND - Tape & Reel (TR) TPN4R712MDL1QCT-ND - Cut Tape (CT) TPN4R712MDL1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN4R712MD,L1Q
Description	MOSFET P-CH 20V 36A 8TSON
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Datasheet	Datasheet
EDA/CAD Models	TPN4R712MD,L1Q Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 1.2V @ 1mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 65 nC @ 5 V
Series U-MOSVI	Vgs (Max) ±12V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 10 V
Part Status Active	Power Dissipation (Max) 42W (Tc)
FET Type P-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20 V	Supplier Device Package 8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C 36A (Tc)	Package / Case 8-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V	Base Product Number TPN4R712
Rds On (Max) @ Id, Vgs 4.7mOhm @ 18A, 4.5V