N-Channel 600 V 4A (Ta) 35W (Tc) Through Hole TO-220SIS
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TK1K7A60F,S4X

DigiKey Part Number
264-TK1K7A60FS4X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK1K7A60F,S4X
Description
X35 PB-F POWER MOSFET TRANSISTOR
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 4A (Ta) 35W (Tc) Through Hole TO-220SIS
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 460µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK1K7A60
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
1€ 1,38000€ 1,38
50€ 0,65580€ 32,79
100€ 0,58500€ 58,50
500€ 0,46072€ 230,36
1 000€ 0,42070€ 420,70
2 000€ 0,38706€ 774,12
5 000€ 0,35064€ 1 753,20
10 000€ 0,34747€ 3 474,70
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€ 1,38000
Unit Price with VAT:€ 1,66980