Name: IGB110S10S1XTMA1
Brand: Infineon Technologies
SKU: 448-IGB110S10S1XTMA1TR-ND
Price: 2.5652 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IGB110S10S1XTMA1
DigiKey Part Number	448-IGB110S10S1XTMA1TR-ND - Tape & Reel (TR) 448-IGB110S10S1XTMA1CT-ND - Cut Tape (CT) 448-IGB110S10S1XTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IGB110S10S1XTMA1
Description	GANFET N-CH 100V 9A 4TDFN
Manufacturer Standard Lead Time	25 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 9A (Ta), 23A (Tc) 2.5W (Ta), 15W (Tc) Surface Mount PG-TSON-4-2
Datasheet	Datasheet
EDA/CAD Models	IGB110S10S1XTMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolGaN™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	11mOhm @ 10A, 5V
Vgs(th) (Max) @ Id	2.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	3.4 nC @ 5 V
Vgs (Max)	±6.5V
Input Capacitance (Ciss) (Max) @ Vds	340 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 15W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TSON-4-2
Package / Case	4-PowerTDFN