ROHM Semiconductor's SCS1xxAGC series maintains low forward voltage over a wide operating temperature range.
Silicon Carbide Transistor advantages include low switching losses, higher efficiency, high temperature operation and high short circuit withstand capability.
Diotec Semiconductor Silicon Carbide (SiC) MOSFETs are offered with an AEC-Q101 automotive qualification.
Silicon Carbide Power Schottky Diode feature superior surge current capability and positive temperature coefficient of Vf.
Vishay silicon carbide Schottky diodes are ideal for extreme, high-speed hard switching over a wide temperature range.
onsemi high-performance SiC cascode JFETs deliver excellent switching speed, lower switching losses, and higher efficiency.
Silicon Carbide (SiC) MOSFET - LSIC1MO170E1000
Publish Date: 2019-01-04
Littelfuse's LSIC1MO170E1000 SiC MOSFET is used as a power semiconductor switch in high-frequency power systems that require a 1,700 V device.
The 1700 V SiC MOSFETs from Wolfspeed are optimized for excellent versatility in auxiliary power supplies.
onsemi’s M3S EliteSiC MOSFET has optimized performance for fast switching applications, maximizing efficiency and minimizing energy loss.
Features superior surge current capability, positive temperature coefficient of Vf, superior figure of merit Qc/If and much more.
SemiQ introduces their Silicon Carbide Schottky Module diodes.
Wolfspeed's 650 V silicon carbide MOSFETs enable smaller, lighter, and highly efficient power conversion in a wide range of power systems.
onsemi NTBL023N065M3S EliteSiC family of silicon carbide (SiC) MOSFETs are designed to deliver exceptional performance in high-speed switching applications.
Microchip Technology's silicon carbide semiconductor discrete products offer improved system efficiency, smaller form factor, and higher operating temperature.
onsemi's EliteSiC schottky diodes feature no reverse recovery current, temperature independent switching characteristics, and excellent thermal performance.
Wolfspeed’s Schottky diodes leverage silicon carbide’s unique advantage over silicon to reduce switching losses.
onsemi's NTBG070N120M3S 1200V M3S SiC MOSFETs are built for speed, shrugging off negative gate voltages and gate spikes thanks to planar technology.
Central Semiconductor silicon carbide N-channel MOSFETs feature ultra-low on-resistance for minimized conduction losses and higher energy efficiency.
Power Semiconductor - Silicon Carbide (SiC)
Publish Date: 2019-06-10
Silicon Carbide (SiC) devices have the potential to revolutionize today’s power electronics; featuring fast switching times, high blocking voltage capabilities & the ability to operate at high temperatures.
Wolfspeed YM SiC power modules have an optimized power terminal layout for minimized package inductance, reduced overshoot voltage and ultra-low switching loss.