Alliance Memory, Inc.

AS4C1M16S-7TCN High-Speed CMOS SDRAM with Low 16 MB Density

Alliance Memory features their AS4C1M16S-7TCN 1 M x 16-bit synchronous DRAM (SDRAM)

Image of Alliance Memory AS4C1M16S-7TCN CMOS SDRAM with Low 16-Mb DensityAlliance Memory's AS4C1M16S-7TCN is a high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 MB in a 50-pin, 400-mil plastic TSOP II package. The device provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions.

Features and Benefits
  • Fast access time from clock of 5.4 ns at a 6/7 ns clock cycle
  • Fast clock rate of 143/166 MHz
  • Internally configured as dual banks of 512 K word x 16-bits with a synchronous interface
  • Programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • JEDEC standard +3.3 V (±0.3 V) power supply
  • Lead (Pb)- and halogen-free
Applications
  • Medical
  • Industrial
  • Automotive
  • Telecom applications requiring high memory bandwidth
  • High-performance PC applications
Operating Temperature Ranges
  • Commercial: 0°C to +70°C
  • Industrial: -40°C to +85°C

AS4C1M16S Series CMOS SDRAM

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
IC DRAM 16MBIT PAR 50TSOP IIAS4C1M16S-7TCNIC DRAM 16MBIT PAR 50TSOP II0 - Immediate$3.49View Details
IC DRAM 16MBIT PAR 50TSOP IIAS4C1M16S-6TINIC DRAM 16MBIT PAR 50TSOP II79 - Immediate$3.90View Details
Published: 2016-02-24