SI7322DN-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products

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SI7322DN-T1-GE3 N-Channel 100V 18A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Product Overview

Digi-Key Part Number	SI7322DN-T1-GE3CT-ND	Copy
Quantity Available	9 519 Can ship immediately
Manufacturer	Vishay Siliconix	Copy
Manufacturer Part Number	SI7322DN-T1-GE3	Copy
Description	MOSFET N-CH 100V 18A 1212-8	Copy
Manufacturer Standard Lead Time	33 Weeks
Detailed Description	N-Channel 100V 18A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8	Copy

Documents & Media

Datasheets	SI7322DN

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	58 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8