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SI5515CDC-T1-GE3 Mosfet Array N and P-Channel 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Price & Procurement
38 006 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0,83000 $0,83
10 0,72300 $7,23
25 0,69000 $17,25
100 0,50080 $50,08
500 0,41848 $209,24
1 000 0,35616 $356,16

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI5515CDC-T1-GE3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 36 000 - Immediate
  • Unit Price: $0,31721
  • Digi-Reel®  : SI5515CDC-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 38 006 - Immediate
  • Unit Price: Digi-Reel®

SI5515CDC-T1-GE3

Datasheet
Digi-Key Part Number SI5515CDC-T1-GE3CT-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI5515CDC-T1-GE3
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Description MOSFET N/P-CH 20V 4A 1206-8
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Manufacturer Standard Lead Time 11 Weeks
Detailed Description

Mosfet Array N and P-Channel 20V 4A 3.1W Surface Mount 1206-8 ChipFET™

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Customer Reference
Documents & Media
Datasheets SI5515CDC
HTML Datasheet SI5515CDC
EDA / CAD Models SI5515CDC-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 36mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 632pF @ 10V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Base Part Number SI5515
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI5515CDC-T1-GE3CT