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IRF640NSTRLPBF N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK
Price & Procurement
4 685 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 1,47000 $1,47
10 1,31100 $13,11
100 1,02180 $102,18

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : IRF640NSTRLPBFTR-ND
  • Minimum Quantity: 800
  • Quantity Available: 4 000 - Immediate
  • Unit Price: $0,81948
  • Digi-Reel®  : IRF640NSTRLPBFDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 4 685 - Immediate
  • Unit Price: Digi-Reel®
  • Tape & Reel (TR)  : IRF640NSTRRPBFTR-ND
  • Minimum Quantity: 800  Non-Stock 
  • Quantity Available: 0
  • Unit Price: $0,81948

IRF640NSTRLPBF

Datasheet
Digi-Key Part Number IRF640NSTRLPBFCT-ND
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Manufacturer

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Manufacturer Part Number IRF640NSTRLPBF
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Description MOSFET N-CH 200V 18A D2PAK
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Manufacturer Standard Lead Time 10 Weeks
Detailed Description

N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IRF640NSTRLPBFCT