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IPD30N10S3L34ATMA1 N-Channel 100V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3
Price & Procurement
828 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0,91000 $0,91
10 0,81200 $8,12
25 0,77120 $19,28
100 0,57830 $57,83
500 0,49022 $245,11
1 000 0,39933 $399,33

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Alternate Package

IPD30N10S3L34ATMA1

Datasheet
Digi-Key Part Number IPD30N10S3L34ATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IPD30N10S3L34ATMA1
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Description MOSFET N-CH 100V 30A TO252-3
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Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 100V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3

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Customer Reference
Documents & Media
Datasheets IPD30N10S3L-34
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Wafer Test Add 27/Apr/2017
PCN Packaging Cover Tape Width Update 17/Jun/2015
Mult Dev Pkg Box Chg 3/Jan/2018
HTML Datasheet IPD30N10S3L-34
Simulation Models OptiMOS-T-100V-Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1976pF @ 25V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPD30N10S3L-34CT
IPD30N10S3L-34CT-ND
IPD30N10S3L34ATMA1CT